N-Channel PowerTrench MOSFET
FDD8896 / FDU8896
March 2015
FDD8896 / FDU8896
N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ
General Description
This ...
Description
FDD8896 / FDU8896
March 2015
FDD8896 / FDU8896
N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications
DC/DC converters
Features
rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low
rDS(ON) Low gate charge
High power and current handling capability
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings 30 ±20
94 85 17 Figure 4 168 80 0.53 -55 to 175
1.88 100 52
Units V V
A A A A mJ W W/oC oC
oC/W oC/W oC/W
©2008 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. 1....
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