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FDD8870 Dataheets PDF



Part Number FDD8870
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Datasheet FDD8870 DatasheetFDD8870 Datasheet (PDF)

FDD8870 / FDU8870 September 2004 FDD8870 / FDU8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features • r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A • r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A • High performance tren.

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FDD8870 / FDU8870 September 2004 FDD8870 / FDU8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features • r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A • r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A • High performance trench technology for extremely low r DS(ON) • Low gate charge Applications • DC/DC converters • High power and current handling capability D G S I-PAK (TO-251AA) G D S G D D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T C = 25°C unless otherwise noted Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (T C = 25 o C, V GS = 10V) (Note 1) ID Continuous (T C = 25 o C, V GS = 4.5V) (Note 1) Continuous (T amb = 25 o C, VGS = 10 V, with Rθ JA = 52 o C/W) Pulsed E AS PD TJ, T STG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25 o C Operating and Storage Temperature 160 150 21 Figure 4 690 160 1.07 -55 to 175 A A A A mJ W W/ o C oC Ratings 30 ± 20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 0.94 100 52 o C/W o C/W o C/W Package Marking and Ordering Information Device Marking FDD8870 FDU8870 Device FDD8870 FDU8870 Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 12mm N/A Quantity 2500 units 75 units ©2004 Fairchild Semiconductor Corporation FDD8870 / FDU8870 Rev. C FDD8870 / FDU8870 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, V GS = 0V V DS = 24V V GS = 0V V GS = ± 20V T C = 150 o C 30 1 250 ± 100 V µA nA On Characteristics V GS(TH) Gate to Source Threshold Voltage V GS = VDS , I D = 250 µA ID = 35A, V GS = 10V rDS(ON) Drain to Source On Resistance ID = 35A, V GS = 4.5V ID = 35A, V GS = 10V, T J = 175 o C 1.2 2.5 V 0.0032 0.0039 0.0036 0.0044 0.0051 0.0063 Ω Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge (V GS = 10V) V DD = 15V, I D = 35A V GS = 10V, R GS = 3.3 Ω 9 83 83 42 139 189 ns ns ns ns ns ns V GS = 0.5V, f = 1MHz V GS = 0V to 10V V GS = 0V to 5V V GS = 0V to 1V V DD = 15V ID = 35A Ig = 1.0mA V DS = 15V, V GS = 0V, f = 1MHz 5160 990 590 2.1 91 48 5 14 9 18 118 62 6.5 pF pF pF Ω nC nC nC nC nC nC Switching Characteristics tO N td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Drain-Source Diode Characteristics V SD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 35A ISD = 15A ISD = 35A, dI SD /dt = 100A/µs ISD = 35A, dI SD /dt = 100A/µs 1.25 1.0 37 21 V V ns nC Notes: 1: Package current limitation is 35A. 2: Starting TJ = 25°C, L = 1.77mH, I A S = 28A, VD D = 27V, VGS = 10V. ©2004 Fairchild Semiconductor Corporation FDD8870 / FDU8870 Rev. C FDD8870 / FDU8870 Typical Characteristics TC = 25°C unless otherwise noted 1.2 POWER DISSIPATION MULTIPLIER 175 150 ID , DRAIN CURRENT (A) 125 100 75 50 25 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE ( o C) 1.0 CURRENT LIMITED BY PACKAGE 0.8 0.6 0.4 0.2 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature Zθ JC , NORMALIZED THERMAL IMPEDANCE PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1 /t 2 PEAK TJ = P DM x Z θJC x RθJC + TC 10 -3 10 -2 t, RECTANGULAR PULSE DURATION (s) 10-1 10 0 101 SINGLE PULSE 0.01 10 -5 10-4 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 1000 ID M, PEAK CURRENT (A) TC = 25 o C FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: VGS = 4.5V I = I25 175 - TC 150 100 30 10 -5 10 -4 10 -3 10-2 t, PULSE WIDTH (s) 10-1 100 101 Figure 4. Peak Current Capability ©2004 Fairchild Semiconductor Corporation FDD8870 / FDU8870 Rev. C FDD8870 / FDU8870 Typical Characteristics TC = 25°C unless otherwise noted 1000 10µ s IA S, AVALANCHE CURRENT (A) STARTING TJ = 25o C 100 ID , DRAIN CURRENT (A) 100 100µ s 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10 STARTING TJ = 150o C 1ms 10ms 1 SINGLE PULSE TJ = MAX RATED TC = 25 o C 0.1 1 1.


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