Document
FDD6696/FDU6696
December 2002
FDD6696/FDU6696
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
• 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V
• Low gate charge (17nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON)
Applications
• DC/DC converter • Motor drives
D
D G S
I-PAK (TO-251AA) G D S
G
D-PAK TO-252 (TO-252)
S
T A=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
V DSS V GSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA =25°C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Ratings
30 ± 16 50 13 100 52 3.8 1.6 –55 to +175
Unit s
V A
PD
Power Dissipation
@TC=25°C @TA =25°C @TA =25°C
W
TJ , TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
Rθ J C Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.9 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75
© 2002 Fairchild Semiconductor Corporation
FDD6696/FDU6696 Rev D (W)
FDD6696/FDU6696
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Min
Typ
Max
Unit s
mJ A
Drain-Source Avalanche Ratings
EAS IAS
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Single Pulse, V DD = 15 V, ID=13A
165 13
Off Characteristics
BV DSS ∆BV DSS ∆TJ IDSS IGSSF V GS(th) ∆V GS(th) ∆TJ RDS(on) Drain–Source Breakdown V GS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
30 23 10 ± 100 1 2 –5 6.7 8.6 10.2 51 1715 410 180 3
V mV/°C µA nA V mV/°C mΩ
V DS = 24 V, V GS =± 16 V,
V GS = 0 V V DS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C V GS = 10 V, ID = 13 A V GS = 4.5 V, ID = 12 A V GS = 10 V, ID = 13 A, TJ =125°C V DS = 5 V, ID = 13 A V DS = 15 V, f = 1.0 MHz V GS = 0 V,
8.0 10.7 15.0
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr
Notes:
S pF pF pF Ω 23 9 43 31 24 ns ns ns ns nC nC nC 13 A V nS nC
Dynamic Characteristics
V GS = 15 mV, V DD = 15 V, V GS = 10 V,
f = 1.0 MHz ID = 13 A, RGEN = 6 Ω
1.3 13 4 27 17
Switching Characteristics
Turn–.