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FDD6696 Dataheets PDF



Part Number FDD6696
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Datasheet FDD6696 DatasheetFDD6696 Datasheet (PDF)

FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V • Low gate charge (17nC typical) • Fast switching • Hi.

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FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V • Low gate charge (17nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor drives D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S T A=25oC unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA =25°C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 30 ± 16 50 13 100 52 3.8 1.6 –55 to +175 Unit s V A PD Power Dissipation @TC=25°C @TA =25°C @TA =25°C W TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ J C Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.9 40 96 °C/W Package Marking and Ordering Information Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 © 2002 Fairchild Semiconductor Corporation FDD6696/FDU6696 Rev D (W) FDD6696/FDU6696 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions (Note 2) Min Typ Max Unit s mJ A Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy Drain-Source Avalanche Current Single Pulse, V DD = 15 V, ID=13A 165 13 Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS IGSSF V GS(th) ∆V GS(th) ∆TJ RDS(on) Drain–Source Breakdown V GS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) 30 23 10 ± 100 1 2 –5 6.7 8.6 10.2 51 1715 410 180 3 V mV/°C µA nA V mV/°C mΩ V DS = 24 V, V GS =± 16 V, V GS = 0 V V DS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C V GS = 10 V, ID = 13 A V GS = 4.5 V, ID = 12 A V GS = 10 V, ID = 13 A, TJ =125°C V DS = 5 V, ID = 13 A V DS = 15 V, f = 1.0 MHz V GS = 0 V, 8.0 10.7 15.0 gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr Notes: S pF pF pF Ω 23 9 43 31 24 ns ns ns ns nC nC nC 13 A V nS nC Dynamic Characteristics V GS = 15 mV, V DD = 15 V, V GS = 10 V, f = 1.0 MHz ID = 13 A, RGEN = 6 Ω 1.3 13 4 27 17 Switching Characteristics Turn–.


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