FDD6685

FDD6685 March 2015 FDD6685 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.5 V Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Qualified to AEC Q101 D G S G S TO-252 D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed, PW ≤ 100µs (Note 1b) PD Power Dissipation for Single Operation (Note 1) (Note 1a) TJ, TSTG (Note 1b) Operating and Storage Junction Temperature Range Ratings –30 ±25 –40 ...