Document
FDD6676
April 2001
FDD6676
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package.
Features
• 78 A, 30 V RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V
• Low gate charge • Fast Switching • High performance trench technology for extremely low RDS(ON)
Applications
• DC/DC converter • Motor Drives
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Ratings
30 ±16 78 100 83 3.8 1.6 -55 to +175
Units
V V A W
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
1.8 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6676 Device FDD6676 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDD6676 Rev C(W)
FDD6676
Electrical Characteristics
Symbol
W DSS IAR
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 15 V, ID=21A
Min Typ
Max Units
370 21 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = –16 V VGS = 0 V VDS = 0 V VDS = 0 V
30 24 1 100 –100
V mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 16.8 A VGS = 4.5 V, ID = 15.8 A VGS = 10 V, ID = 16.8 A,TJ=125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16.8 A
1
1.5 -5 4.8 5.4 7.3
3
V mV/°C mΩ
7.5 8.5 10.5
ID(on) gFS
50 80
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
5103 836 361
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
15 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 9 87 40 45 VDS = 15V, VGS = 5 V ID = 16.8 A, 13 12
27 18 139 64 63
ns ns ns ns nC nC nC
FDD6676 Rev. C(W)
FDD6676
Electrical Characteristics (continued)
Symbol
IS VSD
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max Units
3.2 A V
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A
(Note 2)
0.7
1.2
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6676 Rev. C(W)
FDD6676
Typical Characteristics
50 VGS = 10V 4.5V ID, DRAIN CURRENT (A) 40 3.0V 30 2.5V 20 3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.8
1.6 VGS = 3.0V 1.4 3.5V 1.2 4.0V 4.5V 6.0V 1 10V
10
0 0 0.5 1 1.5
0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.02 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 16.8A VGS = 10V
ID = 8.4 A 0.015 TA = 125oC 0.01
0.005 TA = 25oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature
50 IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V ID, DRAIN CURRENT (A) 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
100 VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -5.