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FDD6676 Dataheets PDF



Part Number FDD6676
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Datasheet FDD6676 DatasheetFDD6676 Datasheet (PDF)

FDD6676 April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. Features • 78 A, 30 V RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switchin.

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FDD6676 April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. Features • 78 A, 30 V RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor Drives D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Ratings 30 ±16 78 100 83 3.8 1.6 -55 to +175 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 1.8 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6676 Device FDD6676 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDD6676 Rev C(W) FDD6676 Electrical Characteristics Symbol W DSS IAR TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID=21A Min Typ Max Units 370 21 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 16 V, VGS = –16 V VGS = 0 V VDS = 0 V VDS = 0 V 30 24 1 100 –100 V mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C VGS = 10 V, ID = 16.8 A VGS = 4.5 V, ID = 15.8 A VGS = 10 V, ID = 16.8 A,TJ=125°C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16.8 A 1 1.5 -5 4.8 5.4 7.3 3 V mV/°C mΩ 7.5 8.5 10.5 ID(on) gFS 50 80 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 5103 836 361 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 15 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 9 87 40 45 VDS = 15V, VGS = 5 V ID = 16.8 A, 13 12 27 18 139 64 63 ns ns ns ns nC nC nC FDD6676 Rev. C(W) FDD6676 Electrical Characteristics (continued) Symbol IS VSD TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 3.2 A V Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 0.7 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6676 Rev. C(W) FDD6676 Typical Characteristics 50 VGS = 10V 4.5V ID, DRAIN CURRENT (A) 40 3.0V 30 2.5V 20 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 VGS = 3.0V 1.4 3.5V 1.2 4.0V 4.5V 6.0V 1 10V 10 0 0 0.5 1 1.5 0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 16.8A VGS = 10V ID = 8.4 A 0.015 TA = 125oC 0.01 0.005 TA = 25oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature 50 IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V ID, DRAIN CURRENT (A) 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -5.


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