FDD6035AL

FDD6035AL FDD6690A September 2001 FDD6035AL N-Channel, Logic Level, PowerTrench MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features 46 A, 30 V. RDS(ON) = 0.0125 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.5 V. Low gate charge (17nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications DC/DC converter Motor drives D D G S TO-252 S TA=25 C unless otherwise noted o G Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current PD - Continuous - Pulsed Parameter Ratings 30 (Note 1) (Note 1a) Units V V A ±20 46 12 100 50 2.8 1.3 -55 to +150 Maximum Power Dissipation @ TC = 25oC TA = 25oC TA = 25oC (Note 1) (Note 1a) (Note 1b) W TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 2.5 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD6035AL 200 1 Fairchild Semiconductor Corporation Device FDD6035AL Reel Size 13’’ Tape width 16mm Quantity 2500 FDD6035AL, Rev. A FDD6035AL FDD6690A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise not...