FDD5612

FDD5612 July 1999 ADVANCE INFORMATION FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power supply designs with higher overall efficiency. Features • 19 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V RDS(ON) = 0.064 Ω @ VGS = 6 V. • Optimized for use in • • Low gate charge. Very fast switching. high frequency DC/DC converters. Applications • • DC/DC converter Motor drives D D G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed o G S T C =25 C unless otherwise noted o Parameter Ratings 60 ± 20 (Note 1) (Note 1a) Units V V A 19 6 100 36 3.2 1.3 -55 to +150 Maximum Power Dissipation @ T C = 25 C T A = 25 C T A = 25 C o o (Note 1) (Note 1a) (Note 1b) W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics R θJA R θJC Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 3.5 40 96 ° C/W ° C/W Package Marking and Ordering Information Device Marking FDD5612 1999 Fairchild Semic...