FDD5202P

FDD5202P February 1999 PRELIMINARY FDD5202P P-Channel, Logic Level, MOSFET General Description This P-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features -8 A, -60 V. RDS(on) = 0.3 Ω @ VGS = -10 V RDS(on) = 0.5 Ω @ VGS = -4.5 V. Low gate charge (15.5nC typical). Fast switching speed. Applications DC/DC converter Motor drives L.D.O. S D G S TO-252 Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD Maximum Power Dissipation @ TC = 25oC TA = 25oC T A = 25oC TJ, Tstg (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) G D T A=25 C unless otherwise noted o Parameter Ratings -60 ±20 -8 -2.3 -15 39 2.8 1.3 -55 to +150 Units V V A W Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1b) 3.2 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD5202P ©1999 Fairchild Semiconductor Corporation Device FDD5202P Reel Size 13’’ Tape width 16mm Quantity 2500 FDD5202P, Rev. A FDD5202P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -48 V, VGS = 0 V VGS = 2...