FDD2670

FDD2670 November 2001 FDD2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ±20 (Note 1) Units V V A W 3.6 20 70 3.2 1.3 3.2 -55 to +150 Maximum Power Dissipation @ TC = 25°C @ TA = 25°C @ TA = 25°C (Note 1) (Note 1a) (Note 1b) (Note 3) dv/dt TJ, TSTG Peak Diode Recovery dv/dt V/ns °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 1.8 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD2670 Device FDD2670 Reel Size 13’’ Tape width 16mm Quantity 2500 uni...