FDC6420C

FDC6420C September 2001 FDC6420C 20V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON). SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). Applications DC/DC converter Load switch LCD display inverter D2 S1 D1 Q2(P) 4 G2 3 2 1 Q1(N) 5 6 SuperSOT Pin 1 TM -6 S2 G1 SuperSOT™-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Q1 20 ±12 (Note 1a) Q2 –20 ±12 –2.2 –6 0.96 0.9 0.7 –55 to +150 Units V V A 3.0 12 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Cas...