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FDC637AN

Fairchild Semiconductor
Part Number FDC637AN
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDC637AN November 1999 FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description This N-Chann...
Datasheet PDF File FDC637AN PDF File

FDC637AN
FDC637AN

Overview
FDC637AN November 1999 FDC637AN Single N-Channel, 2.
5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
Features • 6.
2 A, 20 V.
RDS(on) = 0.
024 Ω @ VGS = 4.
5 V RDS(on) = 0.
032 Ω @ VGS = 2.
5 V • • • • Fast switching speed.
Low gate charge (10.
5nC typical).
High performance trench technology for extreme...


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