FDC6305N

FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V RDS(ON) = 0.12 Ω @ VGS = 2.5 V Low gate charge (3.5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications Load switch DC/DC converter Motor driving D2 S1 D1 5 2 4 3 G2 SuperSOT TM -6 S2 G1 TA = 25°C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 20 (Note 1a) Units V V A W ±8 2.7 8 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 Package Outlines and Ordering Information Device Marking .305 ©1999 Fairchild Semiconductor Corporation Device FDC6305N Reel Size 7’’ Tape Width 8mm Quantity 3000 units FDC6305N, Re...