N-Channel MOSFET
FDC3612
February 2002
FDC3612
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been de...
Description
FDC3612
February 2002
FDC3612
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
2.6 A, 100 V RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V
Applications
DC/DC converter
High performance trench technology for extremely low RDS(ON) Low gate charge (14nC typ) High power and current handling capability Fast switching speed
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
100 ± 20
(Note 1a)
Units
V V A W °C
2.6 20 1.6 0.8 –55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking .362 Device FDC3612 Reel Size 7’’ Tape width 8mm Quantity 3000 units
2002 Fairchild Semiconductor Corporation
FDC3612 Rev B3 (W)
FDC3612
Electrical Characteristics
Symbol
W DSS IAR BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss td...
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