FDC3601N

FDC3601N August 2001 FDC3601N Dual N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications Load switch Battery protection Power management Features 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V Low gate charge (3.7nC typical) Fast switching speed. High performance trench technology for extremely low R DS(ON) . SuperSOTTM-6 package: small footprint 72% (smaller than standard SO-8); low profile (1mm thick). D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 ±20 (Note 1a) Units V V A W 1.0 4.0 0.96 0.9 0.7 −55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W P...