FDC2612

FDC2612 February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed Low gate charge (8nC typical) Applications DC/DC converter D D S 1 2 G 6 5 4 SuperSOT TM -6 D D 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units V V A W °C 1.1 4 1.6 0.8 −55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W Package Marking and Ordering Information Device Marking .262 Device FDC2612 Reel Size 7’’ Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDC2612 Rev B3 (W) FDC2612 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD...