Document
FDP8030L/FDB8030L
November 1999
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
• 80 A, 30 V. RDS(ON) = 0.0035 Ω @ VGS = 10 V RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
• Critical DC electrical parameters specified at elevated temperature • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±20
(Note 1) (Note 1)
Units
V V A W W°C °C °C
80 300 187 1.25 -65 to +175 275
Total Power Dissipation @# TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 0.8 62.5 °C/W °C/W
1999 Fairchild Semiconductor Corporation
FDP8030L Rev C(W)
Electrical Characteristics
Symbol
WDSS IAR
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VDD = 20 V, ID = 80 A
Min
Typ
Max Units
1500 80 mJ A
Drain-Source Avalanche Ratings (Note 1)
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = –20 V VGS = 0 V VDS = 0 V VDS = 0 V 30 23 10 100 –100 V mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, ID = 80 A TJ=125°C ID = 70 A VDS = 10 V ID = 80 A
1
1.5 –5 3.1 4.0 3.6
2
V mV/°C
3.5 5.6 4.5
mΩ
ID(on) gFS
VGS = 10 V, VDS = 10 V,
60 170
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
10500 2700 1650
pF pF pF
Switching Characteristics
tD(on) tr tD (off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 15 V, VGS = 4.5 V, RGS = 10 Ω
ID = 50 A, RGEN = 10 Ω
20 185 160 200 120 27 48
35 225 200 240 170
ns ns ns ns nC nC nC
VDS = 15 V, ID = 80 A, VGS = 5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS ISM VSD
Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain–Source Diode Forward Voltage VGS = 0 V,
(Note 1) (Note 1) (Note 1)
80 300 1 1.3
A A V
IS = 80 A
FDP8030L Rev C(W)
FDP8030L/FDB8030L
Typical Characteristics
100 I D , DRAIN-SOURCE CURRENT (A)
R DS(ON) , NORMALIZED
80
4.5V 3.5V
DRAIN-SOURCE ON-RESISTANCE
3
3.0V
2.5
VGS = 2.5V
60
2
40
1.5
3.0V 3.5V 4.5V 6.0V 10V
2.5V
20
1
0.5
0
0
20
0
0.5 1 1.5 V DS , DRAIN-SOURCE VOLTAGE (V)
2
40 60 80 I D, DRAIN CURRENT (A)
100
120
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.01 ID = 40A RDS(ON), ON-RESISTANCE (OHM)
1.6 DRAIN-SOURCE ON-RESISTANCE
ID = 80A VGS = 10V
1.4
0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 TA = 25oC TA = 125oC
R DS(ON), NORMALIZED
1.2
1
0.8
0.6 -50
-25
0 25 50 75 100 T J, JUNCTION TEMPERATURE (°C)
125
150
0 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60
60 I S, REVERSE DRAIN CURRENT (A)
V DS = 10V
50 I D, DRAIN CURRENT (A) 40 30 20 10 0
10 1 0.1 0.01 0.001 0.0001
TA = 125°C 25°C -55°C
T A = -55°C 25°C 125°C
V GS = 0V
0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4
1
2 3 V GS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP8030L Rev C(W)
FDP8030L/FDB8030L
.