FDB7045L

FDP7045L/FDB7045L January 2000 FDP7045L/FDB7045L General Description N-Channel Logic Level PowerTrench® MOSFET Features • 100 A, 30 V. RDS(ON) = 0.0045 W @ VGS = 10 V RDS(ON) = 0.006 W @ VGS = 4.5 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance PowerTrench technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current TC = 25°C unless otherwise noted Parameter FDP7045L 30 ±20 FDB7045L Units V V A - Continuous - Pulsed (Note 1) (Note 1) 100 75 300 125 0.85 -65 to +175 PD TJ, TSTG RθJC RθJA Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range W W/°C °C °C/W °C/W Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.2 62.5 Package Outlines and Ordering ...