April 1998
FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These...
April 1998
FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These N-Channel logic level enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
T C = 25°C unless otherwise noted
FDP603AL 30 ±20 33
(Note 1)
FDB603AL
Units V V A
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C
100 50 0.33 -65 to 175 275 W W/°C °C °C
TJ,TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
THERMAL CHARAC...