FDB4020P

FDP4020P February 1999 PRELIMINARY FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. Features -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. 175°C maximum junction temperature rating. S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter FDP4020P -20 ±8 -16 -48 37.5 FDB4020P Units V V A W W/°C °C °C/W °C/W Total Power Dissipation @ TC = 25°C Derate above 25 °C Operating and Storage Junction Temperature Range 0.25 -65 to +175 Thermal Characteristics Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) 4 62.5 40 Package Outlines and Ordering Information Device Marking FDP4020P Device FDP4020P Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©1999 Fairchild Semiconductor Corpora...