N-Channel MOSFET
FDB050AN06A0 / FDP050AN06A0
February 2003
FDB050AN06A0 / FDP050AN06A0
N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ
Feat...
Description
FDB050AN06A0 / FDP050AN06A0
February 2003
FDB050AN06A0 / FDP050AN06A0
N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ
Features
r DS(ON) = 4.3mΩ (Typ.), V GS = 10V, ID = 80A Qg(tot) = 61nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82575
Applications
Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
D
SOURCE DRAIN GATE SOURCE GATE
G
TO-220AB
FDP SERIES
TO-263AB
FDB SERIES
DRAIN (FLANGE)
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 135oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 18 Figure 4 470 245 1.63 -55 to 175 A A A mJ W W/oC
o
Ratings 60 ±20
Units V V
C
Thermal Characteristics
Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.61 62 43
oC/W o o
C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the auto...
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