FDB035AN06A0

FDB035AN06A0 July 2002 FDB035AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.5mΩ Features r DS(ON) = 3.2mΩ (Typ.), V GS = 10V, ID = 80A Qg(tot) = 95nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82584 Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems D GATE G SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 153oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 80 22 Figure 4 625 310 2.07 -55 to 175 A A A mJ W W/oC o Ratings 60 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263, (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.48 62 43 o o o C/W C/W C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ R...