FCX658A

SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – NOVEMBER 2000 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt * Optimised hfe characterised upto 200mA APPLICATIONS * Telephone dialler circuits * Hook switches for modems * Predrivers within HID lamp ballasts * (SLIC) Subscriber Line Interface Cards Partmarking Detail - 65A FCX658A C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE 400 400 5 1 500 1 5.7 -55 to +150 UNIT V V V A mA W mW/ °C °C FCX658A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO) V (BR)EBO I CBO I CES I EBO V CE(sat) MIN. 400 400 5 TYP. 480 465 7.8 100 100 100 0.165 0.125 0.2 0.75 0.70 85 100 55 35 50 10 130 3300 150 170 130 90 MHz pF ns ns 0.85 0.85 MAX. UNIT V V V nA nA nA V V V V V CONDITIONS. I C=100 µA I C=10mA* I E=100 µA V CB=320V V CE=320V V EB=4V I C=20mA, I B=1mA I C=50mA, I B=5mA* I C=100mA, I B=10mA* I C=100mA, I B=10mA* IC=100mA, V CE=5V* I C=1mA, V CE=5V* I C=10mA, V CE=10V*...