FC806

Ordering number :EN3401A FC806 Silicon Schottky Barrier Diode 50V, 100mA Rectifier Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC806 is formed with two chips, each being equivalent to the SB01–05CP, placed in one package. Package Dimensions unit:mm 1236A [FC806] 1:Cathode 2:Cathode 3:Anode 4:No Contact 5:Anode SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50MHz sine wave, 1 cycle Conditions Ratings 50 55 100 2 –55 to +125 –55 to +125 Unit V V mA A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interteminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth (j-a) IR=50µA IF=100mA VR=25V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit 560 Conditions Ratings min 50 0.55 15 4.4 10 typ max V V µA pF ns Unit ˚C/W · Marking:806 trr Test Circuit Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/O3196GI/8030MH, TA, TS No.3401-1/2 FC806 No products described or contained herein a...