FC155

Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor (With bias resistances) PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features · Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one package, facilitating high-density mounting. Electrical Connection 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 Package Dimensions unit:mm 2104A [FC155] 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR1] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature [TR2] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit –20 –15 –5 –500 –1 –100 200 300 150 –55 to +150 V V V mA A mA mW mW VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit –20 –15 –5 –500 –1 –5 200 300 150 –55 to +150 V V V mA A mA mW mW Symbol Conditions Ratings Unit ˚C ˚C ˚C ˚C SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/31495MO (KOTO) TA-0...