FC152

Ordering number:EN4653 FC152 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Differential Amp Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC152 is formed with two chips, being equivalent to the 2SC4270, placed in one package. · Excellent in thermal equilibrium, pair capability and especially suited for differerntial amp. Package Dimensions unit:mm 2104A [FC152] 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings 25 15 3 50 200 300 150 –55 to +150 Unit V V V mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio B-E Voltage Difference Gain-Bnadwidth Product Output Capacitance Power Gain Noise Figure Symbol ICBO IEBO hFE VCB=20V, IE=0 VEB=2V, IC=0 VCE=10V, IC=5mA 60 0.7 0.95 3.0 1.5 3.0 0.7 12 3.0 1.0 10 mV GHz pF dB dB Conditons Ratings min typ max 0.1 10 200 Unit µA µA hFE(small/ VCE=10V, IC=5mA large) VBE(large- VCE=10V, IC=0 small) fT VCE=10V, IC=...