FC137

Ordering number:EN3291 FC137 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features · On-chip bias resistances (R1=4.7kΩ)). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC137 is formed with two chips, being equivalent to the 2SA1510, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection C1:Collector 1 C2:Collector 2 B2:Base 2 EC:Emitter Common B1:Base 1 SANYO:CP5 Package Dimensions unit:mm 2066 [FC137] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg 1 unit Conditions Ratings –50 –50 –5 –100 –200 200 300 150 –55 to +150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Symbol ICBO IEBO hFE fT Cob VCB=–40V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–10mA VCE=–10V, IC=–5mA VCB=–10V, f=1MHz –50 –50 –0.4 –0.6 3.3 –0.55 –1.0 4.7 –0.8 –2.0 6.1 100 200 5.1 –0.1 –0.3 MHz pF V V V V V kΩ Con...