FC12

Ordering number:EN3482 FC12 TR:NPN Epitaxial Plannar Silicon Transistor FET:N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC12 is formed with two chips, being equivalent to the 2SC4639, placed in one package. · Common drain and emitter. Package Dimensions unit:mm 2075 [FC12] Electrical Connection C:Collector G:Gate S:Source E/D:Emitter/Drain B:Base SANYO:CP5 Switching Time Test Circuit Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 300 150 –55 to +150 mW VCBO VCEO VEBO IC ICP IB PC 55 50 6 150 300 30 200 V V V mA mA mA mW VDSX VGDS IG ID PD 15 –15 10 50 200 V V mA mA mW Symbol Conditions Ratings Unit ˚C ˚C Marking:12 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/5132MH, HK No.3482-1/5 FC12 Electrical Characterisitics at Ta = 25˚C Parameter [FET] Gate-to-Drain Breakdown Voltage Gate-to-Cutoff Current Cutoff Voltag...