FC11

Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features · Adoption of FBET process. · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package. · Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp. · Common source. Package Dimensions unit:mm 2070 [FC11] Electrical Connection G1:Gate1 G2:Gate2 D2:Drain2 SC:Source Common D1:Drain1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD PT Tj Tstg 1unit Conditions Ratings 40 –40 10 10 200 300 150 –55 to +150 Unit V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Gate-to-Drain Breakdown Voltage Gate Cutoff Current Cutoff Voltage Gate-to-Source Voltage Drop Drain Current Drain Current Ratio Forward Transfer Admittance Forward Transfer Admittance Ratio Input Capacitacnce Reverse Transfer Capacitance Noise Figure Ciss Crss NF | Yfs | Symbol V(BR)GDS IG=10µA, VDS=0 IGSS VGS(off) ∆VGS IDSS VGS=–20V, VDS=0V VDS=10V, ID=1µA |VGS large – VGS small |, VDS=10V, ID=1mA VDS=10V, VGS=0V VDS=10V, IDSS small/IDSS large VDS=10V, VGS=0V, f=1k...