Power MOSFET
PD- 91651C
FB180SA10
HEXFET® Power MOSFET
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Fully Isolated Package Easy to Use and Parallel Very Low On-...
Description
PD- 91651C
FB180SA10
HEXFET® Power MOSFET
l l l l l l l l
Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance
D
VDSS = 100V RDS(on) = 0.0065W
G
ID = 180A
S
Description
Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry.
S O T -22 7
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew
Max.
180 120 720 480 2.7 ± 20 700 180 48 5.7 -55 to + 150 2.5 1.3
Units
A W W/°C V mJ A mJ V/ns °C kV Nm
Thermal Resistance
Parameter
RqJC RqCS Junction-to-Case Case-to-Sink, Flat, Grease...
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