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FMC7G20US60

Fairchild Semiconductor

Compact & Complex Module

FMC7G20US60 October 2001 IGBT FMC7G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipo...


Fairchild Semiconductor

FMC7G20US60

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Description
FMC7G20US60 October 2001 IGBT FMC7G20US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 20A High input impedance Built in brake and 3 phase rectifier circuit Fast & soft anti-parallel FWD R B S U T V W EU EV EW Package Code : 21PM-AA P P1 GU GV GW Applications AC & DC motor controls General purpose inverters Robotics Servo controls GB N E -GU -GV -GW Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES Inverter & Brake IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque TC = 25°C unless otherwise noted Converter Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Collector Current @ TC = 100°C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Short Circuit Withstand Time @ TC = 100°C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 C...




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