Ultra-Fast-Recovery Rectifier Diodes
Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F(AV) (A)
With Heatsink
Elec...
Description
Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F(AV) (A)
With Heatsink
Electrical Characteristics ( Ta =25°C) Tstg (°C) VF (V)
max per chip
Others
IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Tj (°C)
IF (A)
IR (µA) VR=VRM max
IR (H) (mA) VR=VRM Tj=150°C max
trr
(ns) IF /IRP (mA)
trr
(ns) IF /IRP (mA)
Rth( j- ) (°C/ W)
Mass Fig. (g)
FMC-G28S
800
3.0 5.0
50 –40 to +150 60 3.0
3.0 5.0
100 200
1.0 70 500/500 2.0 35 500/1000 4.0 2.1
A
FMC-G28SL
FMC-G28S
IF(AV) – PF Characteristics
12 t /T=1/6
t T
TC – IF(AV) Characteristics
3
I FSM (A) Average Forward Current IF(AV) (A)
IFSM Rating
50
I FSM (A)
Forward Power Dissipation PF (W)
Tj =150°C
D.C.
40
20ms
8
t /T=1/3, Sinewave
2 t /T=1/3, Sinewave t /T=1/2 1
Peak Forward Surge Current
t /T=1/6
30
20
4 D.C. t /T=1/2 0 0 1 2 Average Forward Current IF(AV) (A) 3
10
0 100
0
110 120 130 140 Case Temperature Tc (°C)
150
1
5 10 Overcurrent Cycles
50
FMC-G28SL
IF(AV) – PF Characteristics
20
Average Forward Current IF(AV) (A)
TC – IF(AV) Characteristics
5
60 50 40 30 20 10 0
IFSM Rating
I FSM (A)
I FSM (A)
Forward Power Dissipation PF (W)
Tj =150°C
t /T=1/2
3
Sinewave
10
t /T=1/6
2
t /T=1/3
5
D.C.
t /T=1/2
1 0 50
0 0 1 2 3 4 Average Forward Current IF(AV) (A) 5
Peak Forward Surge Current
15
t T
t /T=1/3, Sinewave
4
t /T=1/6
20ms
D.C.
70 90 110 130 Case Temperature Tc (°C)
150
1
5 10 Overcurrent Cycles
50
External Dimensions
(Unit...
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