FMB150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI FMB150 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° ...
FMB150
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI FMB150 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R Ø.125 NOM. L
FEATURES:
Omnigold™ Metalization System
C B
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
E H
D G
F K I J
16 A 60 V 25 V 60 V 4.0 V 230 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.1 OC/W
O O
DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .125 / 3.18
.230 / 5.84
.255 / 6.48 .7.30 / 18.54
.980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67
ORDER CODE: ASI10588
O
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVCEO BVEBO hFE COB PG ηC
TC = 25 C
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 100 mA IE = 20 mA VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 150 W IC = 1.0 A f = 1.0 MHz f = 108 MHz RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
60 55 25 4.0 20 150 140 9.0 65
UNITS
V V V V --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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