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FMB075

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for A PACKAGE STYLE .500 4L FLG .112x45...


Advanced Semiconductor

FMB075

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Description
FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for A PACKAGE STYLE .500 4L FLG .112x45° L FEATURES: Omnigold™ Metalization System FULL R Ø.125 NOM. C B E H D G F K MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 1.5 OC/W O O DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm I J MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10587 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob PG ηC IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 28 V VCC = 28 V IC = 1.0 A f = 1.0 MHz POUT = 75 W f = 108 MHz 10 100 75 10 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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