Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewa...
Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
90V
Electrical Characteristics (Ta = 25°C) Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g) 1 Chip A IF (A) IR (mA) VR = VRM IR (H) (mA) VR=VRM, Ta=100°C
Tj (°C)
Tstg (°C)
VF (V)
max per element
trr
(ns) IF /IRP (mA)
max per element max per element
FMB-G19L
4.0
60 50 90 8.0 60 15.0 20.0 150 –40 to +150 0.81
4.0 2.0 4.0 7.5 10.0
5.0 3.0 5.0 10.0 15.0
35 15 35 50 2.0 5.5 100 100/100 4.0 2.1
FMB-29 FMB-29L FMB-39 FMB-39M
B Center-tap C
60
FMB-G19L
4
Tc—IF(AV) Derating
50
VF —I F Characteristics (Typical)
50
VR —I R Characteristics (Typical)
I FSM (A)
60 50 40 30 20 10 0
I FMS Rating
I FSM (A)
Average Forward Current I F (AV) (A)
D.C. 3 t /T = 1/6 2 t /T= 1/ 3 1 t /T = 1/2
Forward Current IF (A)
10
Reverse Current IR (mA)
10
Ta = 125ºC 100ºC
20ms
1 60ºC 0.1
1
0.1
Sinewave
0 80
Ta = 125ºC 100ºC 60ºC 27ºC 0 0.5 1.0 1.5
0.01
25ºC
Case Temperature Tc (°C)
90
100
110
120
130
0.01
0.001
0
20
40
60
80
100
Peak Forward Surge Current
1
5
10
50
Forward Voltage VF (V)
Reverse Voltage
VR (V)
Overcurrent Cycles
FMB-29
4
Tc—IF(AV) Derating
50
VF —I F Characteristics (Typical)
10
VR —I R Characteristics (Typical)
Ta = 125ºC
I FMS Rating
I FSM (A)
50
I FSM (A)
Average Forward Current I F (AV) (A)
D.C.
Sinewave
t /T = 1/6
2
1
Ta = 125ºC 100ºC 60ºC 26ºC
Peak Forward Surge Current
3
Forward Curren...
