Transistors
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A
General purpose (dual digital transistors)
EMA...
Transistors
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A
General purpose (dual digital
transistors)
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A
!Features 1) Two DTA114T chips in a EMT or UMT or SMT package.
!Equivalent circuit
EMA4 / UMA4N
(3) (2) (1)
FMA4A
(3) (4) (5)
EMB4 / UMB4N
(3) (2) (1)
IMB4A
(4) (5) (6)
UMB8N
(3) (2) (1)
IMB8A
(4) (5) (6)
R1
R1
R1
R1
R1
R1
R1
R1
R1
(4) (5) (2) (1) (4) (5) (6) (3)
R1
(2) (1)
R1
(4) (5) (6)
R1
(3) (2) (1)
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation
EMA4 / UMA4N / EMB4 / UMB4N / UMB8N
FMA4A / IMB4A / IMB8A
Symbol VCBO VCEO VEBO IC Pd Tj Tstg
Limits −50 −50 −5 −100 150(TOTAL) 300(TOTAL) 150 −55~+150
Unit V V V mA mW
∗1 ∗2
Junction temperature Storage temperature
∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded.
°C °C
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance
∗Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R1
Min. −50 −50 −5 − − − 100 − 7
Typ. − − − − − − 250 250 10
Max. − − − −0.5 −0.5 −0.3 600 − 13
Unit V V V µA µA V − MHz kΩ IC=−50µA IC=−1...