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FM1608

ETC

64Kb Bytewide FRAM Memory

FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High end...


ETC

FM1608

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Description
FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High endurance 10 Billion (1010) read/writes 10 year data retention at 85° C NoDelay™ write Advanced high-reliability ferroelectric process Superior to BBSRAM Modules No battery concerns Monolithic reliability True surface mount solution, no rework steps Superior for moisture, shock, and vibration Resistant to negative voltage undershoots SRAM & EEPROM Compatible JEDEC 8Kx8 SRAM & EEPROM pinout 120 ns access time 180 ns cycle time Equal access & cycle time for reads and writes Low Power Operation 15 mA active current 20 µA standby current Industry Standard Configuration Industrial temperature -40° C to +85° C 28-pin SOP or DIP Description The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Its fast write and high write endurance make it superior to other types of nonvolatile memory. In-system operation of the FM1608 is very similar to other RAM based devices. Memory read- and writecycles require equal times. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1608 is a truly mon...




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