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FM120-M

Formosa MS

Silicon epitaxial planer type

Chip Schottky Barrier Diodes FM120-M THRU FM1100-M Silicon epitaxial planer type Formosa MS SOD-123 0.161(4.1) 0.146(3...


Formosa MS

FM120-M

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Description
Chip Schottky Barrier Diodes FM120-M THRU FM1100-M Silicon epitaxial planer type Formosa MS SOD-123 0.161(4.1) 0.146(3.7) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.063(1.6) 0.055(1.4) 0.071(1.8) 0.055(1.4) 0.110(2.8) 0.094(2.4) 0.035(0.9) Typ. 0.035(0.9) Typ. Dimensions in inches and (millimeters) Mechanical data Case : Molded plastic, JEDE C SOD-123 / MI NI SMA Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.04 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 1.0 30 0.5 10 Rq JA CJ TSTG -55 98 120 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE 12 13 14 15 16 18 10 V RRM (V) *1 V RMS (V) 14 21 28 35 42 56 70 *2 VR *3 VF *4 Operating temperature ( o C) (V) 20 30 40 50 60 80 100 (V) FM120-M FM130-M FM140-M FM150-M FM160-M FM180-M FM1100-M 20 30 40 50 60 80 100 0....




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