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FL7KM-12A Dataheets PDF



Part Number FL7KM-12A
Manufacturers Powerex Power Semiconductors
Logo Powerex Power Semiconductors
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Datasheet FL7KM-12A DatasheetFL7KM-12A Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Œ  Ž 2.6 ± 0.2  q 10V DRIVE q VDSS .

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MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Œ  Ž 2.6 ± 0.2  q 10V DRIVE q VDSS ............................................................................... 600V q rDS (ON) (MAX) ................................................................ 1.3Ω q ID ........................................................................................... 7A Œ Œ GATE  DRAIN Ž SOURCE Ž TO-220FN APPLICATION Switch mode power supply, Inverter fluorescent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 ±30 7 21 7 35 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A W °C °C V g Sep.1998 L = 200µH AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL7KM-12A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 1.1 3.3 5.0 950 115 30 20 30 180 65 1.5 — Max. — ±10 1 4.0 1.3 3.9 — — — — — — — — 2.0 3.57 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 3A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10µs 40 101 7 5 3 2 1ms 100µs 30 20 100 7 5 3 2 10ms 10 10–1 TC = 25°C 0 0 50 100 150 200 7 5 Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 35W TC = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 6V 5V 4.5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) VGS = 20V 10V 6V 8 12 5V 6 PD = 35W 4V 8 4.5V 4 4 4V 2 TC = 25°C Pulse Test 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL7KM-12A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test 32 4 24 ID = 12A 3 16 7A 2 VGS = 10V 8 3A 1 0 0 4 8 12 16 20 0 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) 20 101 7 5 4 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 12 100 7 5 4 3 2 TC = 25°C 75°C 125°C 8 4 0 TC = 25°C VDS = 50V Pulse Test 0 4 8 12 16 20 10–1 VDS = 10V Pulse Test 2 3 4 5 7 100 2 3 4 5 7 101 10–1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 3 2 SWITCHING CHARACTERISTICS (TYPICAL) td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 4 3 2 103 7 5 3 2 Ciss tf tr td(on) 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V Coss 101 7 5 4 3 TCh = 25°C VDD = 200V VGS = 10V 2 3 4 5 7 100 2 3 4 5 7 101 2 Crss 101 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P MIN RELI ARY FL7KM-12A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test .


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