Document
MITSUBISHI Nch POWER MOSFET
. ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som
P
MIN RELI
ARY
FL7KM-12A
HIGH-SPEED SWITCHING USE
FL7KM-12A
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm 2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
2.6 ± 0.2
q 10V DRIVE q VDSS ............................................................................... 600V q rDS (ON) (MAX) ................................................................ 1.3Ω q ID ........................................................................................... 7A
GATE DRAIN SOURCE
TO-220FN
APPLICATION Switch mode power supply, Inverter fluorescent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 600 ±30 7 21 7 35 –55 ~ +150 –55 ~ +150 2000 2.0
Unit V V A A A W °C °C V g Sep.1998
L = 200µH
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
. ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som
P
MIN RELI
ARY
FL7KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±30 — — 2.0 — — — — — — — — — — — — Typ. — — — 3.0 1.1 3.3 5.0 950 115 30 20 30 180 65 1.5 — Max. — ±10 1 4.0 1.3 3.9 — — — — — — — — 2.0 3.57
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
IS = 3A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
5 3 2 tw = 10µs
40
101
7 5 3 2 1ms 100µs
30
20
100
7 5 3 2 10ms
10
10–1 TC = 25°C 0 0 50 100 150 200
7 5
Single Pulse
DC
3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
PD = 35W TC = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 20V 10V 6V 5V 4.5V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
VGS = 20V 10V 6V
8
12
5V
6
PD = 35W 4V
8
4.5V
4
4
4V
2
TC = 25°C Pulse Test
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Nch POWER MOSFET
. ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som
P
MIN RELI
ARY
FL7KM-12A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
TC = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
32
4
24
ID = 12A
3
16
7A
2
VGS = 10V
8
3A
1
0
0
4
8
12
16
20
0 0 10
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS (TYPICAL) 20 101
7 5 4 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
12
100
7 5 4 3 2
TC = 25°C 75°C 125°C
8
4
0
TC = 25°C VDS = 50V Pulse Test
0
4
8
12
16
20
10–1
VDS = 10V Pulse Test 2 3 4 5 7 100 2 3 4 5 7 101
10–1
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2 3 2
SWITCHING CHARACTERISTICS (TYPICAL)
td(off)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
102
7 5 4 3 2
103
7 5 3 2
Ciss
tf
tr td(on)
102
7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V
Coss
101
7 5 4 3 TCh = 25°C VDD = 200V VGS = 10V 2 3 4 5 7 100 2 3 4 5 7 101 2
Crss
101
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Sep.1998
MITSUBISHI Nch POWER MOSFET
. ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som
P
MIN RELI
ARY
FL7KM-12A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
.