FKV560S

MOS FET FKV560S (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings VDSS 50 ± 20 VGSS ± 45 ID ± 135 ID (pulse)* PD 60 (Tc=25ºC) Tch 150 Tstg –55 to +150 * PW 100µs, duty 1% Unit V V A A W ºC ºC Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V min 50 +10 –5 100 2.0 9 2000 1000 150 To be defined 1.0 1.5 11 Ratings typ max (Ta=25ºC) Unit V External Dimensions TO220S 10.2±0.3 (1.4) 4.44±0.2 1.3±0.2 µA µA V S mΩ pF pF pF ns ns ns ns V 10.0 –0.5 +0.3 a 8.6±0.3 (1.5) 1.0 20.0 1.6 +0.2 b 0.1 –0.1 3.0 –0.5 +0.3 1.27±0.2 0.86 –0.1 1.2±0.2 2.54±0.5 2.54±0.5 +0.2 0.4±0.1 a) Type No. b) Lot No. (Unit: mm) 76 ...