FK10VS-10

MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE FK10VS-10 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 ¡VDSS ............................................................................... 500V ¡rDS (ON) (MAX) ............................................................. 1.13Ω ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (MAX.) ....... 150ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 500 ±30 10 30 10 30 125 –55 ~ +150 –55 ~ +150 1.2 4.5 Unit V V A A A A W °C °C g Feb.1999 (1.5) MITSUBISHI Nch POWER MOSFET FK10VS-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, V...