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FK10UM-12

Mitsubishi Electric Semiconductor

HIGH-SPEED SWITCHING USE

MITSUBISHI Nch POWER MOSFET FK10UM-12 HIGH-SPEED SWITCHING USE FK10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensio...


Mitsubishi Electric Semiconductor

FK10UM-12

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Description
MITSUBISHI Nch POWER MOSFET FK10UM-12 HIGH-SPEED SWITCHING USE FK10UM-12 OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) .............................................................. 1.18Ω ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q TO-220 APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 600 ±30 10 30 10 30 150 –55 ~ +150 –55 ~ +150 2.0 Unit V V A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK10UM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS ...




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