FJV4104

FJV4104R FJV4104R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47KΩ, R2=47KΩ) Complement to FJV3104R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking R1 B R2 C R 74 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC=-5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA 32 0.9 47 1 -0.5 -3 62 1.1 200 5.5 68 -0.3 V MHz pF V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV4104R Typical Characteristics 1000 -100 VCE = - 5V R1 = 47 K R2 = 47 K VCE = - 0.3V R...