FJPF9020
FJPF9020
Monolithic Construction With Built In Base-Emitter Shunt Resistors
High Collector-Base Breakdown Voltage : BVCBO = -550V High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) Industrial Use
1
TO-220F 2.Collector 3.Emitter
1.Base
PNP Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym...
