FJN3313R
FJN3313R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driv...
FJN3313R
FJN3313R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) Complement to FJN4313R
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 300 150 -55 ~ 150 Units V V V mA mW °C °C
E B R2 Equivalent Circuit C
R1
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.2V, IC=5mA 1.5 0.042 2.2 0.047 0.5 1.1 2.9 0.052 250 3.7 68 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJN3313R
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP...