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FJD3076

Fairchild Semiconductor
Part Number FJD3076
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Mar 30, 2005
Detailed Description FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage 1 D-PACK 1. Base 2. Collecto...
Datasheet PDF File FJD3076 PDF File

FJD3076
FJD3076

Overview
FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage 1 D-PACK 1.
Base 2.
Collector 3.
Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 40 32 5 2 1 10 150 - 55 ~ 150 Units V V V A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Parameter Collector-Emitter Breakdown Voltage Collector-Base Bre...


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