FJA4310

FJA4310 — NPN Epitaxial Silicon Transistor FJA4310 NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 October 2008 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE * DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC=5mA, IE=0 IC=50mA, RBE=¥ IE=5mA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=4V, IC=3A IC=5A, IB=0.5A VCB=10V, f=1MHz VCE=5V, IC=1A hFE Classification Classification hFE R 50 ~ 100 O 70 ~ 140 Ratings 200 140 6 10 1.5 100 150 - 55 ~ 150 Units V V V A A W °C °C Min. 200 140 6 50 Typ. 250 30 Max. 10 10 180 0.5 Units V V V mA mA V pF MHz Y 90 ~ 180 © 2008 Fairch...