FGS15N40L
September 2001
IGBT
FGS15N40L
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench gate...
FGS15N40L
September 2001
IGBT
FGS15N40L
General Description
Insulated Gate Bipolar
Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application
Features
High Input Impedance High Peak Current Capability (130A) Easy Gate Drive
Application
Strobe Flash
C C
C
C G E
C
E
E
G E
8-SOP
Absolute Maximum Ratings
Symbol VCES VGES ICM (1) PC TJ Tstg TL
TC = 25°C unless otherrwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering PurPoses from case for 5 secnds
@ Ta = 25°C
FGS15N40L 400 ±6 130 2.0 -40 to +150 -40 to +150 300
Units V V A W °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient(PCB Mount) Typ. -Max. 62.5 Units °C/W
Notes: Mounted on 1” square PCB(FR4 or G-10 Material)
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
Electrical Characteristics of IGBT T
Symbol Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-off Current G-E leakage Current VGE = 0V, IC = 1mA VCE = VCES, VGE = ...
