FGH40N6S2D

FGH40N6S2D July 2002 FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Features 100kHz Operation at 390V, 24A 200kHZ Operation at 390V, 18A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC Low Gate Charge . . . . . . . . . 35nC at VGE = 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ Low Conduction Loss IGBT (co-pack) formerly Developmental Type TA49340 Diode formerly Developmental Type TA49391 Package JEDEC STYLE TO-247 E C G Symbol C G COLLECTOR (BOTTOM SIDE METAL) E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Pa...