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FFPF10U150S

Fairchild Semiconductor

DAMPER DIODE

FFPF10U150S FFPF10U150S Features • High voltage and high reliability • High speed switching • Low forward voltage Appl...


Fairchild Semiconductor

FFPF10U150S

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FFPF10U150S FFPF10U150S Features High voltage and high reliability High speed switching Low forward voltage Applications Suitable for damper diode in horizontal deflection circuits 1 2 TO-220F 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG TC=25°C unless otherwise noted Value 1500 @ TC = 125°C 10 100 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Typ. Max. 1.8 1.7 µA 15 200 150 300 14 ns ns V Units V Value 2.0 Units °C/W Electrical Characteristics Symbol V FM * Parameter Maximum Instantaneous Forward Voltage I F = 10A I F = 10A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1A, di/dt = 50A/µ s) Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/µs) Voltage IRM * trr tfr Maximum Forward Recovery VFRM * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000 FFPF10U150S Typical Characteristics 100 1000 [ µA] 100 [A] TJ = 125 C o Reverse Current , I 10 10 TJ = 125 C Forward Current , I R o F 1 TJ = 100 C 0.1 o 1 TJ = 25 C o 0.01 TJ = 25 C o 0.1 0.0 0.001 0.4 0.8 1.2 ...




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