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M1MA174T1 Dataheets PDF



Part Number M1MA174T1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Switching Diode
Datasheet M1MA174T1 DatasheetM1MA174T1 Datasheet (PDF)

M1MA174T1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD Value 100 200 500 200 Unit V mA mA mW 3 CATHODE 1 ANODE http://onsemi.com 1.6 mW/°C 3 TJ, Tstg –55 to +150 °C 1 2 SC–7.

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M1MA174T1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD Value 100 200 500 200 Unit V mA mA mW 3 CATHODE 1 ANODE http://onsemi.com 1.6 mW/°C 3 TJ, Tstg –55 to +150 °C 1 2 SC–70/SOT–323 CASE 419 STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RθJA Max 0.625 Unit °C/mW MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 100 µAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) Symbol V(BR) IR – – CT VF trr – – – 25 5.0 4.0 1.0 4.0 nAdc µAdc pF Vdc ns Min 100 Max – Unit Vdc J6 M J6 M = Device Code = Date Code ORDERING INFORMATION Device M1MA174T1 Package SC–70 Shipping 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 1 November, 2001 – Rev. 1 Publication Order Number: M1MA174T1/D M1MA174T1 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 90% 50 Ω INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 µF tr 10% tp t IF trr t 50 Ω OUTPUT PULSE GENERATOR Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 I F, FORWARD CURRENT (mA) TA = 85°C 10 TA = 25°C 1.0 10 TA = 150°C TA = 125°C TA = -40°C I R , REVERSE CURRENT (m A) 1.0 0.1 TA = 85°C TA = 55°C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 TA = 25°C 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 M1MA174T1 INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.025 0.65 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC–70/SOT–323 POWER DISSIPATION The power dissipation of the SC–70/SOT–323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = TJ(max) – TA RθJA the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C – 25°C 0.625°C/W = 200 milliwatts The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into The 0.625°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, a higher power dissipation of 300 milliwatts can be achieved using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum tempera.


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